Samsung Pushes Ahead with 2nm GAA Process for Exynos 2600

Samsung Foundry has begun prototype mass production of the Exynos 2600 application processor (AP) using its advanced 2nm Gate-All-Around (GAA) process node, despite current production yields remaining around 30%. The company’s LSI chip design division and Samsung Foundry are working intensively to improve yields, which remain a crucial factor for cost-effective chip production.

Low yields mean that only a small portion of silicon dies from each wafer meet quality standards. This increases production costs, as the expense of manufacturing is divided among fewer usable chips. Samsung Foundry’s goal is to raise the 2nm yield to at least 70% to make mass production of the Exynos 2600 viable.

The Exynos 2600 stands out as one of the first APs to be manufactured on the 2nm node and is also among the first to utilize GAA transistors. These transistors surround the channel on all four sides, minimizing current leakage and boosting energy efficiency and performance.

Following prototype mass production, Samsung Foundry plans to begin risk production, focusing on further yield improvements. Official mass production could commence as early as December or January, just in time for the anticipated February launch of the Galaxy S26 series.

If yield targets are met, the Exynos 2600 may power the Galaxy S26 and Galaxy S26+ models in Europe and potentially other regions outside the U.S., Canada, and China. In those three markets, the Galaxy S26 and Galaxy S26+ will be equipped with Qualcomm’s Snapdragon 8 Elite 2 AP, produced by TSMC on a 3nm process. All variants of the Galaxy S26 Ultra are expected to use the Snapdragon 8 Elite 2, regardless of market.